14 results
High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 467-473
- Print publication:
- 2000
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AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 432-437
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- 2000
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Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G11.37
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- 2000
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Strain relaxation in GaN layers grown on porous GaN sublayers
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue 1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, e14
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- 1999
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GaN and AlN Layers Grown by Nano Epitaxial Lateral Overgrowth Technique on Porous Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W2.7
- Print publication:
- 1999
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Porous SiC Substrate Materials for High-Quality Epitaxial and Bulk Growth
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- Journal:
- MRS Online Proceedings Library Archive / Volume 587 / 1999
- Published online by Cambridge University Press:
- 15 March 2011, O8.6
- Print publication:
- 1999
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High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W8.3
- Print publication:
- 1999
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AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W6.5
- Print publication:
- 1999
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GaN p-n Structures Fabricated by Mg Ion Implantation
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 751-756
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- 1999
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GaN P-N Structures Fabricated by Mg ION Implantation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.53
- Print publication:
- 1998
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AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 245
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- 1997
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GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e45
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- 1996
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Optical Properties of Nitride-based Structures Grown on 6H-SiC
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e35
- Print publication:
- 1996
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GaN Three Dimensional Nanostructures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 295
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- 1995
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